HUF76131SK8 Fairchild Semiconductor, HUF76131SK8 Datasheet - Page 5

• Manufacturer Part Number: HUF76131SK8
• Description: MOSFET Power 10a 30V 0.013 Ohm 1Ch HS Logic Gate
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76131SK8

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Typical Performance Curves
Test Circuits and Waveforms
©2003 Fairchild Semiconductor Corporation
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 14. DRAIN TO SOURCE ON RESISTANCE vs GATE
VARY t
REQUIRED PEAK I
0V
2500
2000
1500
1000
500
80
60
40
20
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
0
0
0
P
0
TO OBTAIN
I
I
D
D
V
t
= 2.5A
= 5A
GS
P
VOLTAGE AND DRAIN CURRENT
5
V
AS
V
2
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
10
C
C
C
R
ISS
OSS
RSS
4
G
I
I
D
D
15
= 10A
= 20A
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
6
20
V
I
(Continued)
V
C
C
C
AS
DS
GS
ISS
RSS
OSS
DUT
= 0V, f = 1MHz
0.01
= C
= C
= C
L
8
GS
25
GD
DS
+ C
+ C
+
-
GD
GD
V
DD
30
10
NOTE: Refer to Fairchild Application Notes 7254 and 7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
0
10
8
6
4
2
0
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
200
150
100
0
50
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
0
0
V
DD
GATE CURRENT
= 15V, I
10
R
GS
10
, GATE TO SOURCE RESISTANCE ( )
I
D
AS
Q
= 10A, R
V
g
, GATE CHARGE (nC)
DD
t
P
20
= 15V
20
L
= 1.5
BV
t
AV
DSS
30
30
WAVEFORMS IN
DESCENDING ORDER:
I
I
I
I
D
D
D
D
= 2.5A
= 20A
= 10A
= 5A
HUF76131SK8 Rev. B1
V
DS
40
40
t
t
t
r
d(OFF)
f
t
d(ON)
V
DD
50
50