M29W320DT70N6 STMicroelectronics, M29W320DT70N6 Datasheet - Page 17

Flash 4Mx8 or 2Mx16 70ns

M29W320DT70N6

Manufacturer Part Number
M29W320DT70N6
Description
Flash 4Mx8 or 2Mx16 70ns
Manufacturer
STMicroelectronics
Datasheet

Specifications of M29W320DT70N6

Data Bus Width
8 bit, 16 bit
Memory Type
NOR Flash
Memory Size
32 Mbit
Architecture
Sectored
Interface Type
CFI
Access Time
70 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
10 mA
Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSOP-1-48
Organization
4 MB x 8
Lead Free Status / Rohs Status
 Details

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The Program/Erase Controller will suspend within
the Erase Suspend Latency Time (refer to Table 5.
for value) of the Erase Suspend Command being
issued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It is not possible to select any further
blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. If any attempt is made to
program in a protected block or in the suspended
block then the Program command is ignored and
the data remains unchanged. The Status Register
is not read and no error condition is given. Read-
ing from blocks that are being erased will output
the Status Register.
It is also possible to issue the Auto Select, Read
CFI Query and Unlock Bypass commands during
an Erase Suspend. The Read/Reset command
must be issued to return the device to Read Array
mode before the Resume command will be ac-
cepted.
Erase Resume Command. The Erase Resume
command must be used to restart the Program/
Erase Controller after an Erase Suspend. The de-
vice must be in Read Array mode before the Re-
sume command will be accepted. An erase can be
suspended and resumed more than once.
Block Protect and Chip Unprotect Commands.
Each block can be separately protected against
accidental Program or Erase. The whole chip can
be unprotected to allow the data inside the blocks
to be changed.
Block Protect and Chip Unprotect operations are
described in APPENDIX C..
M29W320DT, M29W320DB
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