M29W320DT70N6 STMicroelectronics, M29W320DT70N6 Datasheet - Page 37

• Manufacturer Part Number: M29W320DT70N6
• Description: Flash 4Mx8 or 2Mx16 70ns
• Manufacturer: STMicroelectronics

Specifications of M29W320DT70N6

• Data Bus Width: 8 bit, 16 bit
• Memory Type: NOR Flash
• Memory Size: 32 Mbit
• Architecture: Sectored
• Interface Type: CFI
• Access Time: 70 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 10 mA
• Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-1-48
• Organization: 4 MB x 8
• Lead Free Status / Rohs Status: Details

Table 23. CFI Query System Interface Information
Table 24. Device Geometry Definition
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
1Fh
x16
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
x16
20h
21h
22h
23h
24h
25h
26h
Address
Address
4Eh
5Ah
5Ch
5Eh
3Ch
4Ch
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
3Ah
3Eh
4Ah
36h
38h
40h
42h
44h
46h
48h
x8
x8
00C5h
00B5h
000Ah
0027h
0036h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
0016h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
Data
Data
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
Region 1 Information
Number of identical size erase block = 0000h+1
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
Region 2 Information
Number of identical size erase block = 0001h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
CC
CC
PP
PP
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
n
in number of bytes
Description
Description
n
n
times typical
ms
n
n
n
times typical
M29W320DT, M29W320DB
ms
times typical
n
n
times typical
µs
n
µs
n
512µs
Value
12.5V
11.5V
16 Kbyte
16µs
2.7V
3.6V
4 MByte
8 Kbyte
16s
x8, x16
NA
NA
NA
NA
Async.
1s
Value
NA
4
1
2
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