DIM200WHS17-A000 Dynex Semiconductor, DIM200WHS17-A000 Datasheet - Page 3

• Manufacturer Part Number: DIM200WHS17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
case
Note:
†
* L is the circuit inductance + L
Symbol
Measured at the power busbars and not the auxiliary terminals.
V
V
SC
= 25˚C unless stated otherwise.
R
CE(sat)
I
I
C
GE(TH)
V
I
L
CES
GES
I
FM
INT
F
F
ies
M
Data
†
†
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
Parameter
M
V
V
V
I
V
V
DC
t
I
I
V
T
t
IEC 60747-9
p
C
p
F
F
j
GE
GE
GE
GE
GE
CE
= 1ms
= 200A
= 200A, T
= 125˚C, V
= 10mA, V
10 s, V
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
= 25V, V
Test Conditions
CE(max)
CE
CE
C
C
case
CC
GE
GE
= 200A
= 200A, , T
= V
= V
CE
= 1000V,
= 0V, f = 1MHz
= V
= 125˚C
= V
= 0V
CES
CES
CE
CES
-
-
, T
– L*. di/dt
case
case
= 125˚C
= 125˚C
I
I
1
2
DIM200WHS17-A000
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.23
900
800
5.5
2.7
3.4
2.2
2.3
15
20
-
-
-
-
-
Max.
200
400
6.5
3.4
4.0
2.5
2.6
1
6
2
-
-
-
-
-
Units
m
mA
mA
nH
nF
V
V
V
A
A
V
V
A
A
A
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