DIM200WHS17-A000 Dynex Semiconductor, DIM200WHS17-A000 Datasheet - Page 4

• Manufacturer Part Number: DIM200WHS17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

DIM200WHS17-A000
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/8
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
Q
I
I
OFF
t
REC
OFF
t
REC
t
t
ON
ON
rr
rr
r
f
r
f
rr
g
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
R
R
I
I
F
F
G(ON)
G(ON)
= 200A, V
dI
Test Conditions
= 200A, V
dI
Test Conditions
F
F
/dt = 2500A/ s
/dt = 3000A/ s
V
V
V
V
L ~ 100nH
L ~ 100nH
= R
= R
I
GE
CE
I
GE
CE
C
C
= 200A
= 200A
= 900V
= 900V
= 15V
= 15V
G(OFF)
G(OFF)
R
R
= 900V,
= 900V,
= 4.7
= 4.7
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
Typ.
Typ.
880
410
450
110
100
195
590
300
320
195
60
80
64
40
90
50
65
42
2
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C
C