DIM200WHS17-A000 Dynex Semiconductor, DIM200WHS17-A000 Datasheet - Page 5

• Manufacturer Part Number: DIM200WHS17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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400
350
300
250
200
150
100
Fig. 5 Typical switching energy vs collector current
80
70
60
50
40
30
20
10
50
0
0
0
0
Conditions:
T
R
V
V
and not the auxiliary terminals
c
cc
ce
g
= 125˚C,
= 4.7 ,
= 900V
is measured at power busbars
0.5
20
Fig. 3 Typical output characteristics
40
1
Collector-emitter voltage, V
60
1.5
Collector current, I
80
2
100 120 140 160 180 200
2.5
3
C
- (A)
ce
3.5
- (V)
4
4.5
E
E
E
on
off
rec
5
140
120
100
80
60
40
20
200
150
100
400
350
300
250
0
Fig. 6 Typical switching energy vs gate resistance
50
4
0
0
Conditions:
T
I
V
C
c
cc
V
and not the auxiliary terminals
= 100A,
= 125˚C,
ce
= 900V
0.5
is measured at power busbars
Fig. 4 Typical output characteristics
5
1 1.5
Gate resistance, R
Collector-emitter voltage, V
6
2 2.5
DIM200WHS17-A000
7
3 3.5
g
- (Ohms)
8
4 4.5
ce
- (V)
9
5 5.5
E
E
E
on
off
rec
10
6
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