mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 19

• Manufacturer Part Number: mt29f4g08aaa
• Description: 4gb, 8gb, And 16gb X8 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

Command Definitions
Table 6:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Command
PAGE READ
PAGE READ CACHE MODE
PAGE READ CACHE MODE LAST
READ for INTERNAL DATA MOVE
RANDOM DATA READ
READ ID
READ STATUS
PROGRAM PAGE
PROGRAM PAGE CACHE MODE
PROGRAM for INTERNAL DATA MOVE
RANDOM DATA INPUT
BLOCK ERASE
RESET
OTP DATA PROGRAM
OTP DATA PROTECT
OTP DATA READ
Command Set
Notes:
1. Indicates required data cycles between command cycle 1 and command cycle 2.
2. Do not cross block address boundaries when using PAGE READ CACHE MODE operations.
3. Do not cross plane address boundaries when using READ for INTERNAL DATA MOVE and
4. The RANDOM DATA READ command is limited to use within a single page.
5. These commands are valid during busy when performing an interleaved die operation. See
6. The RANDOM DATA INPUT command is limited to use within a single page.
PROGRAM for INTERNAL DATA MOVE. See Tables 3 and 4 on pages 13 and 14 for plane
address boundary definitions.
“Interleaved Die Operations” on page 47 for additional details.
Command
Cycle 1
A0h
A5h
00h
31h
00h
05h
90h
70h
80h
80h
85h
85h
60h
AFh
3Fh
FFh
Number of
Address
Cycles
19
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
5
–
–
5
2
1
–
5
5
5
2
3
–
5
5
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Required
Optional
Cycles
Data
Yes
Yes
Yes
Yes
No
No
No
No
No
No
No
No
No
No
No
1
Command
Cycle 2
D0h
30h
35h
E0h
10h
15h
10h
10h
10h
30h
–
–
–
–
–
–
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
During
Valid
Busy
Yes
Yes
No
No
No
No
No
No
No
No
No
No
No
No
No
No
Notes
2
2
3
4
5
5
3
6
5