mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 52
mt29f4g08aaa
Manufacturer Part Number
mt29f4g08aaa
Description
4gb, 8gb, And 16gb X8 Nand Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT29F4G08AAA.pdf
(81 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
mt29f4g08aaa-WP-A
Manufacturer:
MIC
Quantity:
11 200
Company:
Part Number:
mt29f4g08aaaWP:A
Manufacturer:
AMP
Quantity:
1 670
Interleaved TWO-PLANE PROGRAM PAGE CACHE MODE Operations
Figure 41:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
80h
Interleaved TWO-PLANE PROGRAM PAGE CACHE MODE Operation with R/B# Monitoring
Address
Die 1
1
Data
Figures 41 and 42 show how to perform two types of interleaved TWO-PLANE
PROGRAM PAGE CACHE MODE operations. In Figure 41, the R/B# signal is monitored.
In Figure 42 on page 53, the status register is monitored with the TWO-
PLANE/MULTIPLE-DIE READ STATUS (78h) command.
The interleaved TWO-PLANE PROGRAM PAGE CACHE MODE operation must meet
two-plane addressing requirements. See “Two-Plane Addressing” on page 35 for details.
RANDOM DATA INPUT (85h) is permitted during interleaved TWO-PLANE PROGRAM
PAGE CACHE MODE operations.
11h
(or 81h)
80h
Address
Die 1
Data
15h
80h
52
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Address
Die 1
80h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Data
Address
Die 2
11h
Data
(or 81h)
11h
80h
(or 81h)
Address
Command Definitions
Die 1
80h
©2006 Micron Technology, Inc. All rights reserved.
Address
Die 2
Data
15h
Data
15h
1