mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 36

• Manufacturer Part Number: mt29f4g08aaa
• Description: 4gb, 8gb, And 16gb X8 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

TWO-PLANE PAGE READ 00h-00h-30h
TWO-PLANE RANDOM DATA READ 06h-E0h
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
The TWO-PLANE PAGE READ (00h-00h-30h) operation is similar to the PAGE READ
(00h-30h) operation. It transfers two pages of data from the NAND Flash array to the
data registers. Each page must be from a different plane on the same die.
To enter the TWO-PLANE PAGE READ mode, write the 00h command to the command
register, then write 5 ADDRESS cycles for plane 0 (BA6 = 0). Next, write the 00h
command to the command register, then write 5 ADDRESS cycles for plane 1 (BA6 = 1).
Finally, issue the 30h command. The first-plane and second-plane addresses must meet
the two-plane addressing requirements and, in addition, they must have identical
column addresses.
After the 30h command is written, page data is transferred from both planes to their
respective data registers in
fers are complete, R/B# goes HIGH. To read out the data from the plane 0 data register,
pulse RE# repeatedly. After the data cycle from the plane 0 address completes, issue a
TWO-PLANE RANDOM DATA READ (06h-E0h) command to select the plane 1 address,
then repeatedly pulse RE# to read out the data from the plane 1 data register.
Alternatively, the READ STATUS (70h) command can monitor data transfers. When the
transfers are complete, status register bit 6 is set to “1.” To read data from the first of the
two planes, the user must first issue the TWO-PLANE RANDOM DATA READ (06h-E0h)
command (see “TWO-PLANE RANDOM DATA READ 06h-E0h”) and pulse RE# repeat-
edly. When the data cycle is complete, issue a TWO-PLANE RANDOM DATA READ (06h-
E0h) command to select the other plane. To output the data beginning at the specified
column address, pulse RE# repeatedly.
Use of the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command is prohibited
during and following a TWO-PLANE PAGE READ operation.
The TWO-PLANE RANDOM DATA READ (06h-E0h) command is similar to the
RANDOM DATA READ (05h-E0h) command, except that it requires 5 ADDRESS cycles
rather than 2. The command selects a die and plane, and a column address from which
to read data after a TWO-PLANE PAGE READ (00h-00h-30h) command.
To issue a TWO-PLANE RANDOM DATA READ command, issue the 06h command, then
5 ADDRESS cycles, and follow with the E0h command. Pulse RE# repeatedly to read data
from the new plane, beginning at the specified column address.
The primary purpose of the TWO-PLANE RANDOM DATA READ command is to select a
new die and plane, and a column address within that die and plane. If a new die and
plane do not need to be selected, then it is possible to use the RANDOM DATA READ
(05h-E0h) command instead (see “RANDOM DATA READ 05h-E0h” on page 22).
t
R. During these transfers, R/B# goes LOW. When the trans-
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4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
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Command Definitions
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