mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 45

• Manufacturer Part Number: mt29f4g08aaa
• Description: 4gb, 8gb, And 16gb X8 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

TWO-PLANE BLOCK ERASE 60h-60h-D0h
Figure 33:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
WE#
R/B#
I/Ox
ALE
CLE
CE#
RE#
60h
TWO-PLANE BLOCK ERASE Operation
Address input (3 cycles)
1st plane
The TWO-PLANE BLOCK ERASE (60h-60h-D0h) operation is similar to the BLOCK
ERASE (60h-D0h) operation. It erases two blocks instead of one. The blocks to be erased
must be on different planes on the same die. The first-plane and second-plane
addresses must meet the two-plane addressing requirements (see “Two-Plane
Addressing” on page 35). Additionally, the page addresses, PA[5:0], for both planes must
be LOW.
Begin a TWO-PLANE BLOCK ERASE operation by writing 60h to the command register,
followed by 3 ADDRESS cycles of the first-plane block address. Then write 60h again to
the command register, followed by 3 ADDRESS cycles of the second-plane block
address. Finally, issue the D0h command.
R/B# goes LOW for the duration of block erase time,
complete, R/B# returns HIGH. The READ STATUS (70h) command also indicates that
the device is ready when status register bit 6 is set to “1.” The only valid commands
during
(78h), and RESET (FFh).
If the READ STATUS (70h) command indicates an error in the operation (status register
bit 0 = 1), then use the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command
twice—once for each plane—to determine which plane operation failed.
t
BERS are READ STATUS (70h), TWO-PLANE/MULTIPLE-DIE READ STATUS
60h
Address input (3 cycles)
2nd plane
45
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
D0h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t BERS
t
BERS. When block erasure is
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
70h
I/O 0 = 0 ERASE successful
I/O 0 = 1 ERASE error
Status
Don’t Care