mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 27

• Manufacturer Part Number: mt29f4g08aaa
• Description: 4gb, 8gb, And 16gb X8 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

Figure 16:
PROGRAM Operations
PROGRAM PAGE 80h-10h
SERIAL DATA INPUT 80h
RANDOM DATA INPUT 85h
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Status Register Operation
WE#
Micron NAND Flash devices are inherently page-programmed devices. Pages must be
programmed consecutively within a block, from the least significant page address to
most significant page address (that is, 0, 1, 2, …, 63). Random page address program-
ming is prohibited.
Micron NAND Flash devices also support partial-page programming operations. This
means that any single bit can only be programmed one time before an erase is required;
however, the page can be partitioned such that a maximum of four programming opera-
tions are supported before an erase is required.
PROGRAM PAGE operations require loading the SERIAL DATA INPUT (80h) command
into the command register, followed by 5 ADDRESS cycles, then the data. Serial data is
loaded on consecutive WE# cycles starting at the given address. The PROGRAM (10h)
command is written after the data input is complete. The control logic automatically
executes the proper algorithm and controls all the necessary timing to program and
verify the operation. Write verification only detects “1s” that are not successfully written
to “0s.”
R/B# goes LOW for the duration of array programming time,
(70h) command and the RESET (FFh) command are the only commands valid during the
programming operation. Bit 6 of the status register will reflect the state of R/B#. When
the device reaches ready, read bit 0 of the status register to determine if the program
operation passed or failed (see Figure 17 on page 28). The command register stays in
read status register mode until another valid command is written to it.
After the initial data set is input, additional data can be written to a new column address
with the RANDOM DATA INPUT (85h) command. The RANDOM DATA INPUT
command can be used any number of times in the same page prior to issuing the PAGE
WRITE (10h) command. See Figure 18 on page 28 for the proper command sequence.
I/Ox
CE#
RE#
CLE
70h
27
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
t CLR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t REA
Status output
Command Definitions
t
PROG. The READ STATUS
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