mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 62

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mt29f4g08aaa

Manufacturer Part Number
mt29f4g08aaa
Description
4gb, 8gb, And 16gb X8 Nand Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet

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Table 15:
Table 16:
Table 17:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Description
Parameter
Parameter
Input capacitance
Input/output capacitance (I/O)
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
ALE to data start
ALE hold time
ALE setup time
CE# hold time
CLE hold time
CLE setup time
CE# setup time
Data hold time
Data setup time
WRITE cycle time
WE# pulse width HIGH
WE# pulse width
WP# setup time
Capacitance
Test Conditions
AC Characteristics: Command, Data, and Address Input
Notes:
Notes:
Notes:
1. These parameters are verified in device characterization and are not 100 percent tested.
2. Test conditions: T
1. Verified in device characterization; not 100 percent tested.
1. For PAGE READ CACHE MODE and PROGRAM PAGE CACHE MODE operations, cache mode
2. Timing for
timing applies.
the first rising edge of WE# for data input.
MT29FxG08xAA
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
ADL
ALH
ALS
CH
CLH
CLS
CS
DH
DS
WC
WH
WP
WW
C
C
IN
IO
t
ADL begins in the ADDRESS cycle on the final rising edge of WE# and ends with
C
MT29F16G08FAA
MT29F16G08FAA
MT29F4G08AAA
MT29F8G08DAA
MT29F4G08AAA
MT29F8G08DAA
MT29F8G08BAA
MT29F8G08BAA
= 25°C; f = 1 MHz; V
Min
70
10
25
10
10
25
35
10
20
45
15
25
30
Device
Cache Mode
62
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Max
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
= 0V.
1 TTL GATE and CL = 50pF
Min
Standard Mode
70
10
10
15
10
25
10
12
30
Max
5
5
5
5
10
20
20
40
10
20
20
40
0.0V to V
Value
Electrical Characteristics
V
5ns
CC
/2
Max
CC
©2006 Micron Technology, Inc. All rights reserved.
Unit
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Notes
1, 2
1, 2
Notes
1
2

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