mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 31

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mt29f4g08aaa

Manufacturer Part Number
mt29f4g08aaa
Description
4gb, 8gb, And 16gb X8 Nand Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet

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Figure 22:
One-Time Programmable (OTP) Area
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
60h
BLOCK ERASE Operation
Address Input (3 cycles)
The actual command sequence is a two-step process. The ERASE SETUP (60h)
command is first written to the command register. Then 3 cycles of addresses are
written to the device. Next, the ERASE CONFIRM (D0h) command is written to the
command register. At the rising edge of WE#, R/B# goes LOW and the control logic auto-
matically controls the timing and erase-verify operations. R/B# stays LOW for the entire
t
The READ STATUS (70h) command can be used to check the status of the BLOCK ERASE
operation. When bit 6 = 1, the ERASE operation is complete. Bit 0 indicates a pass/fail
condition where 0 = pass (see Figure 22, and Table 9 on page 26).
This Micron NAND Flash device offers a protected, one-time programmable NAND
Flash memory area. Ten full pages (2,112 bytes per page) of OTP data is available on the
device, and the entire range is guaranteed to be good. The OTP area is accessible only
through the OTP commands. Customers can use the OTP area in any way they desire;
typical uses include programming serial numbers or other data for permanent storage.
In Micron NAND Flash devices, the OTP area leaves the factory in a non-written state
(all bits are “1s”). Programming or partial-page programming enables the user to
program only “0” bits in the OTP area. The OTP area cannot be erased, even if it is not
protected. Protecting the OTP area simply prevents further programming of the OTP
area.
While the OTP area is referred to as “one-time programmable,” Micron provides a
unique way to program and verify data—before permanently protecting it and
preventing future changes.
BERS erase time.
D0h
31
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
t BERS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70h
I/O 0 = 0 ERASE successful
I/O 0 = 1 ERASE error
Command Definitions
Status
©2006 Micron Technology, Inc. All rights reserved.
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