hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 85

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

5.6
A driver mode with reduced output drive characteristics can be selected by setting address bit A1 in the EMRS(1)
extended mode register to 1.
Table 38
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1) The driver characteristics evaluation conditions are Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (
3) The driver characteristics evaluation conditions are Maximum 0 °C (
Data Sheet
Reduced Output Drive Characteristics
Reduced Strength Default Pull-up Driver Characteristics
Pull-up Driver Current [mA]
Min.
0.00
–1.72
–3.44
–5.16
–6.76
–8.02
–8.84
–9.31
–9.64
–9.89
–10.09
–10.26
–10.41
–10.54
–10.66
–10.77
–10.88
–10.98
—
—
1)
IBIS Target low
0.00
–3.20
–6.20
–9.04
–11.69
–14.11
–16.27
–18.16
–19.77
–21.10
–22.15
–22.96
–23.61
–24.61
–24.64
–25.07
–25.47
–25.85
–26.21
—
86
2)
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
T
T
CASE
IBIS Target high
0.00
–3.70
–7.22
–10.56
–13.75
–16.78
–19.61
–22.20
–24.50
–26.46
–28.07
–29.36
–30.40
–31.24
–31.93
–32.51
–33.01
–33.46
–33.89
—
CASE
).
),
T
V
V
CASE
DDQ
DDQ
),
= 1.9 V, fast–fast process
= 1.7 V, slow–slow process
V
AC & DC Operating Conditions
DDQ
512-Mbit DDR2 SDRAM
= 1.8 V, typical process
2)
09112003-SDM9-IQ3P
Max.
0.00
–4.77
–9.54
–45.21
–48.21
–50.73
–52.77
–54.42
–55.80
–57.03
–58.23
–59.43
–60.63
–14.31
–19.08
–23.85
–28.62
–33.33
–37.77
–41.73
Rev. 1.6, 2005-08
3)