hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 88

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

5.8
Power and Ground clamps are provided on address
(A[13:0], BA[11:0]), RAS, CAS, CS, WE, and ODT pins.
Table 41
Voltage across clamp (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Data Sheet
Power & Ground Clamp V-I Characteristics
Power & Ground Clamp V-I Characteristics
Minimum Power Clamp
Current (mA)
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
89
The V-I characteristics for pins with clamps is shown in
Table
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
41.
Minimum Ground Clamp Current (mA)
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
AC & DC Operating Conditions
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.6, 2005-08