tc58dvm92a1fti0 TOSHIBA Semiconductor CORPORATION, tc58dvm92a1fti0 Datasheet - Page 4

• Manufacturer Part Number: tc58dvm92a1fti0
• Description: 512-mbit 64m U 8 Bits Cmos Nand E2 Prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta
AC TEST CONDITIONS
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
SYMBOL
t
t
t
t
REAID
t
t
t
RSTO
CSTO
t
t
t
t
t
ALEA
t
t
t
t
t
t
t
t
t
RHW
WHC
WHR
t
t
t
t
CLH
t
t
t
t
t
t
t
REA
CEA
CEH
t
RHZ
CHZ
REH
t
CRY
RST
CLS
ALS
ALH
WW
AR2
WP
WC
WH
t
WB
CS
CH
DS
DH
RR
RP
RC
OH
RB
t
IR
- 40° to 85°C, V
R
CLE Setup Time
CLE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
ALE Access Time (ID Read)
Data Output Hold Time
Output-High-impedance-to- RE Falling Edge
Memory Cell Array to Starting Address
ALE Low to RE Low (Read Cycle)
Device Reset Time (Read/Program/Erase)
CE Setup Time
CE Hold Time
RE Access Time (Serial Data Access)
CE Access Time (Serial Data Access, ID Read)
CE High Time for Last Address in Serial Read Cycle
RE Access Time (ID Read)
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
RE Access Time (Status Read)
CE Access Time (Status Read)
RE High to WE Low
RE Last Clock Rising Edge to Busy (in Sequential Read)
CE High to Ready (When interrupted by CE in Read Mode)
WE High Hold Time
WP High to WE Low
WE High to CE Low
WE High to RE Low
WE High to Busy
PARAMETER
CC
2.7 V to 3.6 V)
PARAMETER
MIN
100
100
10
10
25
10
20
10
50
15
20
35
50
10
15
30
30
50













0
0
0
0
0
C
L
(100 pF)  1 TTL
CONDITION
2.4 V, 0.4 V
1.5 V, 1.5 V
1.5 V, 1.5 V
t
r
6/10/500
(
3 ns
TC58DVM92A1FTI0
MAX
RY
200
200
1 
35
45
45
35
30
20
35
45
25























/
BY
)
2003-07-11 4/44
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ps
ns
ns
ns
Ps
Ps
NOTES
(1) (2)
(2)