M58WR064 STMICROELECTRONICS [STMicroelectronics], M58WR064 Datasheet
M58WR064
Manufacturer Part Number
M58WR064
Description
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.M58WR064.pdf
(82 pages)
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FEATURES SUMMARY
February 2003
SUPPLY VOLTAGE
– V
– V
– V
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
– Random Access: 70, 80, 100 ns
PROGRAMMING TIME
– 8µs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
DUAL OPERATIONS
– Program Erase in one Bank while Read in
– No delay between Read and Write operations
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Read
mode
others
DD
DDQ
PP
= 12V for fast Program (optional)
= 1.65V to 2.2V for Program, Erase and
= 1.65V to 3.3V for I/O Buffers
64 Mbit (4Mb x 16, Multiple Bank, Burst)
Figure 1. Package
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR064ET: 8810h
– Bottom Device Code, M58WR064EB: 8811h
1.8V Supply Flash Memory
VFBGA56 (ZB)
7.7 x 9 mm
M58WR064EB
M58WR064ET
FBGA
1/82
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