M58WR064 STMICROELECTRONICS [STMicroelectronics], M58WR064 Datasheet - Page 61

• Manufacturer Part Number: M58WR064
• Description: 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 35. Protection Register Information
Table 36. Burst Read Information
Table 37. Bank and Erase Block Region Information
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
(P+10)h = 49h
(P+12)h= 4Bh
(P+13)h = 4Ch
(P+14)h = 4Dh
(P+15)h = 4Eh
(P+16)h = 4Fh
(P+18)h =51h
(P+C)h = 45h
(P+D)h = 46h
(P+E)h = 47h
(P+17)h = 50h
(P+F)h = 48h
(P+11)h =
M58WR064ET (top)
Offset
Offset
Offset
Offset
2. Bank Regions. There are two Bank Regions, 1 contains all the banks that are made up of main blocks only, 2 contains the banks
4Ah
that are made up of the parameter and main blocks.
Data
00C0h
0018h
0001h
0080h
0000h
0003h
0004h
02h
0003h
0003h
0001h
0002h
0007h
Data
Data
Data
M58WR064EB (bottom)
(P+18)h =51h
V
V
Number of protection register fields in JEDEC ID space. 0000h indicates that
256 fields are available.
Protection Field 1: Protection Description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2
Bits 24-31 2
Page-mode read capability
Number of synchronous mode read configuration fields that follow.
Synchronous mode read capability configuration 1
Synchronous mode read capability configuration 2
Synchronous mode read capability configuration 3
DD
PP
Offset
bits 0-7
bit 3-7
bit 0-2
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Supply Optimum Program/Erase voltage
Logic Supply Optimum Program/Erase voltage (highest performance)
n
n
bytes in factory pre-programmed region
bytes in user programmable region
’n’ such that 2
Reserved
’n’ such that 2
number of continuous synchronous reads when the device is
configured for its maximum word width. A value of 07h
indicates that the device is capable of continuous linear bursts
that will output data until the internal burst counter reaches
the end of the device’s burstable address space. This field’s
3-bit value can be written directly to the read configuration
register bit 0-2 if the device is configured for its maximum
word width. See offset 28h for word width to determine the
burst data output width.
Data
02h
page bytes. See offset 28h for device word width to
determine page-mode data output width.
Number of Bank Regions within the device
n
n+1
HEX value represents the number of read-
Description
Description
Description
HEX value represents the maximum
M58WR064ET, M58WR064EB
Description
16 Bytes
8 Bytes
8 Bytes
0080h
Value
Value
Value
Cont.
1.8V
12V
1
3
4
8
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