M58WR064 STMICROELECTRONICS [STMicroelectronics], M58WR064 Datasheet - Page 34

• Manufacturer Part Number: M58WR064
• Description: 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M58WR064ET, M58WR064EB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58WR064E the maximum number
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. T
34/82
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
5. Measurements performed at 25°C. T
Parameter Block (4 KWord) Erase
Main Block (32 KWord) Erase
Bank (4Mbit) Erase
Parameter Block (4 KWord) Program
Main Block (32 KWord) Program
Word Program
Program Suspend Latency
Erase Suspend Latency
Program/Erase Cycles (per Block)
Parameter Block (4 KWord) Erase
Main Block (32 KWord) Erase
Bank (4Mbit) Erase
Bank (4Mbit) Program (Quad-Enhanced Factory
Program)
4Mbit Program
Word/ Double Word/ Quadruple Word Program
Parameter Block (4 KWord)
Program
Main Block (32 KWord) Program
Program/Erase Cycles (per Block)
A
= –40 to 85°C; V
(3)
Parameter
(5)
(3)
DD
= 1.65V to 2.2V; V
(3)
(3)
A
(2)
= 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program.
(3)
DDQ
Preprogrammed
Not Preprogrammed
Preprogrammed
Not Preprogrammed
Main Blocks
Parameter Blocks
Quadruple Word
Quadruple Word
Word
Quadruple Word
Word
Main Blocks
Parameter Blocks
= 1.65V to 3.3V.
Condition
(3, 5)
(5)
(5)
(5)
of Program/ Erase cycles depends on the voltage
supply used.
100,000
100,000
Min
t.b.a.
Typ
300
510
256
0.3
0.8
1.1
4.5
0.3
0.9
3.5
40
10
32
64
3
5
5
8
8
(4)
100k W/E
Typical
Cycles
after
10
1
3
1000
2500
Max
100
100
2.5
2.5
10
20
4
4
4
cycles
cycles
cycles
cycles
Unit
ms
ms
ms
ms
ms
ms
ms
µs
µs
µs
µs
s
s
s
s
s
s
s
s
s