IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 10

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

Figure 9. Typicalswitchingtimesasafunctionofgate
Figure 11. Gate-emitterthresholdvoltageasafunction
1000
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
1
5
0
resistor
(inductiveload,T
V
Figure E)
ofjunctiontemperature
(I
GE
15
T
C
t
t
t
t
=15/0V,I
vj
=0.4mA)
d(off)
f
d(on)
r
25
,JUNCTIONTEMPERATURE[°C]
25
r
G
,GATERESISTOR[ ]
50
typ.
min.
max.
C
=20A,Dynamictestcircuitin
35
vj
=150°C,V
45
75
55
100
CE
=400V,
65
Highspeedswitchingseriesfifthgeneration
125
75
150
85
10
Figure 10. Typicalswitchingtimesasafunctionof
Figure 12. Typicalswitchingenergylossesasa
1000
100
10
1
8
7
6
5
4
3
2
1
0
25
0
IKW40N65F5,IKP40N65F5
junctiontemperature
(inductiveload,V
I
Figure E)
functionofcollectorcurrent
(inductiveload,T
V
Figure E)
C
T
GE
=20A,r
t
t
t
t
E
E
E
vj
d(off)
f
d(on)
r
50
20
,JUNCTIONTEMPERATURE[°C]
off
on
ts
=15/0V,r
I
C
,COLLECTORCURRENT[A]
G
=15 ,Dynamictestcircuitin
75
40
G
=15 ,Dynamictestcircuitin
CE
vj
100
=150°C,V
60
=400V,V
125
80
Rev.1.1,2012-11-09
GE
CE
=400V,
=15/0V,
150
100
175
120