IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 13

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

Figure 21. Typicalreverserecoverychargeasa
Figure 23. Typicaldiodepeakrateoffallofreverse
-100
-150
-200
-250
-300
-350
-400
-50
1.2
1.0
0.8
0.6
0.4
0.2
0
500
500
di
di
functionofdiodecurrentslope
(V
recoverycurrentasafunctionofdiode
currentslope
(V
F
F
T
T
T
T
R
R
/dt,DIODECURRENTSLOPE[A/µs]
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
=400V)
j
j
j
j
=25°C, I
=150°C, I
700
=25°C, I
=150°C, I
700
F
F
F
F
= 20A
= 20A
900
900
= 20A
= 20A
1100
1100
1300
1300
Highspeedswitchingseriesfifthgeneration
1500
1500
13
Figure 22. Typicalreverserecoverycurrentasa
Figure 24. Typicaldiodeforwardcurrentasafunction
20
19
18
17
16
15
14
13
12
11
10
60
50
40
30
20
10
9
8
7
6
5
0
500
0.0
IKW40N65F5,IKP40N65F5
di
functionofdiodecurrentslope
(V
offorwardvoltage
F
T
T
T
T
R
/dt,DIODECURRENTSLOPE[A/µs]
0.5
=400V)
j
j
j
j
=25°C, I
=150°C, I
700
=25°C
=150°C
V
F
,FORWARDVOLTAGE[V]
1.0
F
F
= 20A
900
= 20A
1.5
1100
2.0
Rev.1.1,2012-11-09
1300
2.5
1500
3.0