IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 7

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

DiodeCharacteristic,atT
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
b
b
vj
=150°C
t
Q
di
t
Q
di
rr
rrm
rr
rrm
rr
rr
rr
rr
/dt
/dt
Highspeedswitchingseriesfifthgeneration
T
V
I
di
T
V
I
di
F
F
vj
vj
R
=20.0A,
R
=5.0A,
F
F
=150°C,
=150°C,
=400V,
/dt=1000A/µs
=400V,
/dt=1000A/µs
7
IKW40N65F5,IKP40N65F5
-
-
-
-
-
-
-
-
-220
-500
1.00
17.0
0.50
14.0
Rev.1.1,2012-11-09
85
50
-
-
-
-
-
-
-
-
A/µs
A/µs
µC
µC
ns
ns
A
A