IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 11

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

Figure 13. Typicalswitchingenergylossesasa
Figure 15. Typicalswitchingenergylossesasa
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
200
5
V
CE
functionofgateresistor
(inductiveload,T
V
Figure E)
functionofcollectoremittervoltage
(inductiveload,T
I
Figure E)
15
C
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=20A,r
E
E
E
E
E
E
250
off
on
ts
off
on
ts
=15/0V,I
25
r
G
,GATERESISTOR[ ]
G
300
=15 ,Dynamictestcircuitin
35
C
=20A,Dynamictestcircuitin
vj
vj
350
=150°C,V
=150°C,V
45
55
400
CE
GE
65
=400V,
=15/0V,
Highspeedswitchingseriesfifthgeneration
450
75
500
85
11
Figure 14. Typicalswitchingenergylossesasa
Figure 16. Typicalgatecharge
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
16
14
12
10
8
6
4
2
0
25
0
IKW40N65F5,IKP40N65F5
functionofjunctiontemperature
(inductiveload,V
I
Figure E)
(I
C
T
C
=20A,r
E
E
E
130V
520V
vj
=40A)
50
off
on
ts
,JUNCTIONTEMPERATURE[°C]
20
Q
GE
G
=15 ,Dynamictestcircuitin
,GATECHARGE[nC]
75
40
CE
100
=400V,V
60
125
Rev.1.1,2012-11-09
GE
=15/0V,
80
150
175
100