IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 9

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

Figure 5. Typicaloutputcharacteristic
Figure 7. Typicalcollector-emittersaturationvoltageas
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
120
100
80
60
40
20
0
0
0
V
V
GE
(T
afunctionofjunctiontemperature
(V
CE
=20V
vj
18V
15V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
T
GE
25
=150°C)
8V
7V
6V
5V
I
I
I
vj
C
C
C
=15V)
,JUNCTIONTEMPERATURE[°C]
=10A
=20A
=40A
1
50
2
75
100
3
125
Highspeedswitchingseriesfifthgeneration
4
150
175
5
9
Figure 6. Typicaltransfercharacteristic
Figure 8. Typicalswitchingtimesasafunctionof
1000
120
100
100
80
60
40
20
10
0
1
4.5
0
IKW40N65F5,IKP40N65F5
(V
collectorcurrent
(inductiveload,T
V
Figure E)
5.0
GE
CE
V
T
T
t
t
t
t
=15/0V,r
d(off)
f
d(on)
r
20
GE
=20V)
j
j
=25°C
=150°C
I
C
,GATE-EMITTERVOLTAGE[V]
,COLLECTORCURRENT[A]
5.5
40
G
6.0
=15 ,Dynamictestcircuitin
vj
=150°C,V
6.5
60
7.0
80
Rev.1.1,2012-11-09
CE
=400V,
7.5
100
8.0
120
8.5