IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 12

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

Figure 17. Typicalcapacitanceasafunctionof
0.001
Figure 19. Diodetransientthermalimpedanceasa
1E+4
1000
0.01
100
0.1
10
1
1
1E-7
0
V
CE
collector-emittervoltage
(V
functionofpulsewidth
(D=t
1E-6
,COLLECTOR-EMITTERVOLTAGE[V]
C
C
C
GE
5
iss
oss
rss
=0V,f=1MHz)
p
/T)
1E-5
t
p
,PULSEWIDTH[s]
10
1E-4
i:
r
i
i
[K/W]:
[s]:
15
0.001
1
0.6701584
3.4E-4
20
0.01
2
0.775759
4.7E-3
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Highspeedswitchingseriesfifthgeneration
25
3
0.3540826
0.04680901
0.1
30
1
12
Figure 18. IGBTtransientthermalresistance
Figure 20. Typicalreverserecoverytimeasafunction
0.001
0.01
130
120
110
100
0.1
90
80
70
60
50
40
1
1E-6
500
IKW40N65F5,IKP40N65F5
di
(D=t
ofdiodecurrentslope
(V
F
1E-5
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
700
p
/T)
i:
r
i
[K/W]:
i
[s]:
t
1E-4
p
,PULSEWIDTH[s]
T
T
j
j
=25°C, I
=150°C, I
900
1
0.08245484
7.3E-5
0.001
F
F
= 20A
2
0.144197
7.0E-4
= 20A
1100
0.01
Rev.1.1,2012-11-09
3
0.2151774
0.01235548
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
1300
0.1
4
0.1581708
0.08020881
1500
1