IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 4

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

Maximumratings
ThermalResistance
Characteristic
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyT
T
T
Pulsedcollectorcurrent,t
TurnoffsafeoperatingareaV
Diodeforwardcurrent,limitedbyT
T
T
Diodepulsedcurrent,t
Gate-emitter voltage
TransientGate-emittervoltage(t
PowerdissipationT
PowerdissipationT
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Parameter
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
C
C
C
C
=25°C
=100°C
=25°C
=100°C
C
C
=25°C
=100°C
p
limitedbyT
p
limitedbyT
CE
 650V,T
p
vjmax
=10µs,D<0.010)
vjmax
vjmax
Symbol Conditions
R
R
R
vjmax
th(j-c)
th(j-c)
th(j-a)
Highspeedswitchingseriesfifthgeneration
vj
 175°C
PG-TO247-3
PG-TO220-3
4
Symbol
V
I
I
-
I
I
V
P
T
T
PG-TO247-3
PG-TO220-3
M
C
Cpuls
F
Fpuls
vj
stg
CE
GE
tot
IKW40N65F5,IKP40N65F5
-40...+175
-55...+150
Value
120.0
120.0
120.0
255.0
120.0
74.0
46.0
36.0
21.0
Max.Value
650
±20
±30
260
260
0.6
0.60
1.80
Rev.1.1,2012-11-09
40
62
Unit
Nm
°C
°C
°C
W
V
A
A
A
A
A
V
Unit
K/W
K/W
K/W