IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 2

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1


KeyPerformanceandPackageParameters
Highspeed5FASTIGBTinTRENCHSTOP
RAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowQ
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
Type
IKW40N65F5
IKP40N65F5
g
650V
650V
V
CE
40A
40A
I
C
V
Highspeedswitchingseriesfifthgeneration
CEsat
,T
1.6V
1.6V
vj
=25°C
2
175°C
175°C
T
vjmax
IKW40N65F5,IKP40N65F5
TM
5technologycopackedwith
G
K40F655
K40F655
Marking
C E
C
Rev.1.1,2012-11-09
G
PG-TO247-3
PG-TO220-3
Package
1
2
3
C
E