IKW40N65F5 Infineon Technologies, IKW40N65F5 Datasheet - Page 8

• Manufacturer Part Number: IKW40N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKW40N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 74 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 120 W
• Package / Case: PG-TO-247-3
• Mounting Style: Through Hole
• Part # Aliases: IKW40N65F5FKSA1

Figure 1. Forwardbiassafeoperatingarea
Figure 3. Collectorcurrentasafunctionofcase
100
0.1
10
80
70
60
50
40
30
20
10
1
0
25
1
V
(D=0,T
RecommendeduseatV
temperature
(V
CE
t
100µs
200µs
500µs
p
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=1µs
10µs
50µs
50
DC
T
15V,T
C
,CASETEMPERATURE[°C]
C
=25°C,T
10
75
vj
175°C)
vj
100
175°C;V
GE
100
125
7.5V)
GE
=15V.
Highspeedswitchingseriesfifthgeneration
150
1000
175
8
Figure 2. Powerdissipationasafunctionofcase
Figure 4. Typicaloutputcharacteristic
275
250
225
200
175
150
125
100
120
100
75
50
25
80
60
40
20
0
0
25
0
IKW40N65F5,IKP40N65F5
V
V
GE
temperature
(T
(T
CE
=20V
vj
vj
18V
15V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
=25°C)
8V
7V
6V
5V
50
175°C)
T
1
C
,CASETEMPERATURE[°C]
75
2
100
3
125
Rev.1.1,2012-11-09
4
150
175
5