PSMN015-60BS,118 NXP Semiconductors, PSMN015-60BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN015-60BS,118
• Description: MOSFET N-CH 60 V 14.8 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 23.7 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN015-60BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
Thermal characteristics
δ = 0.5
0.2
0.1
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
0.05
0.02
single shot
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 1 March 2012
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
Conditions
see
Minimum footprint; mounted
on a printed circuit board
10
-3
Figure 4
10
-2
PSMN015-60BS
Min
-
-
10
P
-1
t
Typ
1
60
p
T
t
© NXP B.V. 2012. All rights reserved.
p
(s)
δ =
003aae030
Max
1.74
-
t
T
p
t
1
Unit
K/W
K/W
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