AT45DB642D-CNU Atmel, AT45DB642D-CNU Datasheet - Page 27

• Manufacturer Part Number: AT45DB642D-CNU
• Description: IC FLASH 64MBIT 66MHZ 8CASON
• Manufacturer: Atmel

Specifications of AT45DB642D-CNU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 64M (8192 pages x 1056 bytes)
• Speed: 66MHz
• Interface: Parallel/Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-CASON
• Package: 8CASON
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 256KByte x 32
• Timing Type: Synchronous
• Interface Type: Parallel|Serial-SPI
• Data Bus Width: 8 bit
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 256 KB x 32
• Ic Interface Type: Parallel, Serial
• Clock Frequency: 66MHz
• Supply Voltage Range: 2.7V To 3.6V
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

14.2
3542K–DFLASH–04/09
Operation Mode Summary
The commands described previously can be grouped into four different categories to better
describe which commands can be executed at what times.
Group A commands consist of:
Group B commands consist of:
Group C commands consist of:
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands, any command in Group C can be executed. The Group B commands using buffer 1
should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-
timed portion of a Group D command, only the Status Register Read command should be
executed.
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer 1 (or 2)
10. Auto Page Rewrite
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
4. Manufacturer and Device ID Read
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
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