MT45W4MW16BFB-708 WT TR Micron Technology Inc, MT45W4MW16BFB-708 WT TR Datasheet - Page 18

• Manufacturer Part Number: MT45W4MW16BFB-708 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 14:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
(except A19)
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
A19
WE#
OE#
CLK
CRE
CE#
Configuration Register WRITE in Synchronous Mode Followed by READ ARRAY
2
High-Z
Notes: 1. Non-default BCR settings for configuration register WRITE in synchronous mode followed
Latch Control Register Value
t CSP
t SP
t SP
t SP
OPCODE
t SP
t CW
2. A[19] = LOW to load RCR; A[19] = HIGH to load BCR.
3. CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—addi-
t HD
t HD
t HD
t HD
Operation
by READ ARRAY operation: Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
tional WAIT cycles caused by refresh collisions require a corresponding number of addi-
tional CE# LOW cycles.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Latch Control Register Address
18
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CBPH
High-Z
3
ADDRESS
ADDRESS
Configuration Registers
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DATA