MT45W4MW16BFB-708 WT TR Micron Technology Inc, MT45W4MW16BFB-708 WT TR Datasheet - Page 42

• Manufacturer Part Number: MT45W4MW16BFB-708 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 31:
Table 23:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
t
t
t
ABA
ACLK
BOE
CBPH
CEM
CEW
CLK
CSP
HD
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Burst READ Timing Parameters – 4-Word Burst
4-Word Burst READ Operation
Min
12.5
4.5
5
1
2
-708
High-Z
Notes: 1. Non-default BCR settings for 4-word burst READ operation: Latency code two (three
READ Burst Identified
Max
46.5
t SP
7.5
t CSP
20
20
20
t SP
ADDRESS
t SP
9
8
(WE# = HIGH)
t SP
VALID
t CEW
2. Clock rates below 50 MHz (
t HD
t HD
t HD
t HD
clocks); WAIT active LOW; WAIT asserted during delay.
Min
15
High-Z
-706/-856
5
1
5
2
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Max
t ABA
7.5
56
11
20
20
20
8
t OLZ
t KHKL
Units
t BOE
t ACLK
ns
ns
ns
ns
µs
ns
ns
ns
ns
t KHTL
t CLK
OUTPUT
t
42
CLK > 20ns) are allowed as long as
VALID
t CEM
Symbol
t
t
t
t
t
t
t
t
HZ
KHKL
KHTL
KOH
KP
OHZ
OLZ
SP
t KOH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUTPUT
VALID
t KP
Min
2
4
5
3
-708
OUTPUT
VALID
Max
1.8
8
9
8
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
t
t KP
CSP specifications are met.
OUTPUT
Min
VALID
Timing Diagrams
-706/-856
2
5
5
3
t HD
t
t
OHZ
HZ
Max
2.0
11
t CBPH
8
8
UNDEFINED
High-Z
Units
ns
ns
ns
ns
ns
ns
ns
ns