MT45W4MW16BFB-708 WT TR Micron Technology Inc, MT45W4MW16BFB-708 WT TR Datasheet - Page 30

• Manufacturer Part Number: MT45W4MW16BFB-708 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum and Typical Standby Currents
Table 9:
Table 10:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
PAR
PAR
Full Array
1/2 Array
1/4 Array
1/8 Array
0 Array
Full Array
1/2 Array
1/4 Array
1/8 Array
0 Array
Maximum Standby Currents for Applying PAR and TCR Settings
Maximum Standby Currents for Applying PAR and TCR Settings – Low-Power (L)
+15°C (RCR[6:5] = 10b)
+15°C (RCR[6:5] = 10b) +45°C (RCR[6:5] = 01b) +70°C (RCR[6:5] = 00b) +85°C (RCR[6:5] = 11b)
Notes: 1. For RCR[6:5] = 00b (default), refer to Figure 23, Typical Refresh Current vs. Temperature
Notes: 1. For RCR[6:5] = 00b (default), refer to Figure 23, Typical Refresh Current vs. Temperature
The following tables and figures refer to the maximum and typical standby currents for
the MT45W4MW16BFB device. The typical values shown in Figure 23 on page 31 are
measured with the appropriate PAR and TCR settings. The maximum values shown in
Table 9 and Table 11 are measured with the relevant TCR bits set in the configuration
register.
60
57
54
52
50
70
65
60
57
50
2. In order to achieve low standby current, all inputs must be driven to either V
3. TCR values for 85°C are 100 percent tested. TCR values for 15°C , 45°C, and 70°C are sam-
2. In order to achieve low standby current, all inputs must be driven to either V
3. TCR values for 85°C are 100 percent tested. TCR values for 15°C, 45°C, and 70°C are sam-
(Itcr), on page 31 for typical values.
may be slightly higher for up to 500ms after power-up or when entering standby mode
pled only.
(Itcr), on page 31 for typical values.
may be slightly higher for up to 500ms after power-up or when entering standby mode.
pled only.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
+45°C (RCR[6:5] = 01b) +70°C (RCR[6:5] = 00b) +85°C (RCR[6:5] = 11b)
85
80
75
70
55
70
65
61
58
55
30
TCR
TCR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
105
100
95
90
60
85
80
75
70
60
Electrical Characteristics
©2003 Micron Technology, Inc. All rights reserved.
120
115
110
105
100
70
95
90
85
70
CC
CC
Q or V
Q or V
SS
SS
. I
. I
.
SB
SB