MT45W4MW16BFB-708 WT TR Micron Technology Inc, MT45W4MW16BFB-708 WT TR Datasheet - Page 29

• Manufacturer Part Number: MT45W4MW16BFB-708 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 8:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Description
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Asynchronous Random READ/
WRITE
Asynchronous Page READ
Initial Access, Burst READ/WRITE
Continuous Burst READ
Continuous Burst WRITE
Standby Current
Electrical Characteristics and Operating Conditions
Wireless Temperature
Notes: 1. -30°C exceeds the CellularRAM Working Group 1.0 specification of -25°C.
2. Input signals may overshoot to V
3. V
4. Input signals may undershoot to V
5. BCR[5:4] = 00b.
6. This parameter is specified with the outputs disabled to avoid external loading effects. The
7. I
0.4V.
user must add the current required to drive output capacitance expected in the actual sys-
tem.
achieve low standby current, all inputs must be driven to either V
slightly higher for up to 500ms after power-up or when entering standby mode.
SB
IH
V
V
V
1
(MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. In order to
Chip Disabled
IN
Chip Enabled,
IN
(MIN) value is not aligned with CellularRAM Working Group 1.0 specification of V
I
I
IN
OE# = V
Conditions
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
OL
(-30ºC < T
OH
CE# = V
= V
= V
= 0 to V
I
OUT
= +0.2mA
= -0.2mA
CC
CC
Q or 0V
Q or 0V
= 0
IH
CC
C
CC
or
Q
< +85ºC); Industrial Temperature (-40ºC < T
Q
I
V
I
I
CC
V
CC
I
CC
I
V
V
V
I
V
CC
CC
I
CC
I
LO
OH
SB
OL
CC
LI
3W
IH
IL
3R
1P
1
2
Q
29
Symbol
Low-Power (L)
Standard
80 MHz
66 MHz
80 MHz
66 MHz
80 MHz
66 MHz
CC
SS
Q + 1.0V for periods less than 2ns during transitions.
-70
-85
-70
-85
- 1.0V for periods less than 2ns during transitions
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.80 V
-0.20
Min
1.70
1.70
1.4
CC
Q
Electrical Characteristics
C
V
< +85ºC)
0.20 V
CC
©2003 Micron Technology, Inc. All rights reserved.
Max
1.95
3.30
Q + 0.2
120
100
0.4
25
20
15
12
35
30
18
15
35
30
1
1
CC
CC
Q or V
Q
SS
Units
mA
mA
mA
mA
mA
µA
µA
µA
. I
V
V
V
V
V
V
SB
may be
Notes
2, 3
CC
4
5
5
6
6
6
6
6
7
Q -