MT45W4MW16BFB-708 WT TR Micron Technology Inc, MT45W4MW16BFB-708 WT TR Datasheet - Page 53

• Manufacturer Part Number: MT45W4MW16BFB-708 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 42:
Table 35:
Table 36:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AVH
AVS
AW
BW
CKA
CVS
CW
DH
ABA
ACLK
BOE
CBPH
CEW
CLK
DQ[15:0]
LB#/UB#
WRITE Timing Parameters – Async WRITE Followed by Burst READ
READ Timing Parameters – Async WRITE Followed by Burst READ
Asynchronous WRITE Followed by Burst READ
A[21:0]
IN/OUT
ADV#
WAIT
Min
Min
12.5
WE#
OE#
CLK
10
70
70
70
10
70
CE#
0
5
0
5
1
-70x
-708
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IL
Notes: 1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Latency code
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
Max
Max
t VPH
46.5
High-Z
7.5
20
20
9
t WHZ
VALID ADDRESS
t AS
t AVS
t CVS
t VP
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
3. Clock rates below 50 MHz (
t CW
t WC
t WP
DATA
two (three clocks); WAIT active LOW; WAIT asserted during delay.
vided every
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Working Group 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
t AVH
t DH
Min
Min
t WPH
10
85
85
85
10
85
15
t WC
5
1
0
5
0
-706/-856
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
VALID ADDRESS
-856
t AW
t BW
t VS
t AS
t DW
DATA
t WC
Max
Max
7.5
t WR
56
11
20
20
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
t CKA
t CBPH
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
t CSP
V
V
t SP
t SP
t CEW
ADDRESS
OH
OL
t SP
t SP t HD
VALID
t HD
t HD
t
53
t HD
CLK > 20ns) are allowed as long as
t CLK
High-Z
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DW
VP
VPH
VS
WC
WHZ
WP
WPH
WR
CSP
HD
KOH
OHZ
SP
t ABA
t ACLK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t BOE
OUTPUT
VALID
Min
t KOH
Min
4.5
20
10
10
70
70
46
10
0
2
2
3
-70x
-708
OUTPUT
VALID
Max
Max
20
8
8
OUTPUT
VALID
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
t
CSP specifications are met.
Min
Min
Timing Diagrams
23
10
10
85
85
55
10
0
5
2
2
3
-706/-856
OUTPUT
VALID
-856
t OHZ
UNDEFINED
Max
Max
20
8
8
High-Z
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns