MT45W4MW16BFB-708 WT TR Micron Technology Inc, MT45W4MW16BFB-708 WT TR Datasheet - Page 8

• Manufacturer Part Number: MT45W4MW16BFB-708 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Part-Numbering Information
Figure 3:
Valid Part Number Combinations
Device Marking
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Micron Technology
Product Family
45 = PSRAM/CellularRAM Memory
Operating Core Voltage
W = 1.70V–1.95V
Address Locations
M = Megabits
Operating Voltage
W = 1.70V–3.30V
Bus Configuration
16 = x16
READ/WRITE Operation Mode
B = Asynchronous/Page/Burst
Part Number Chart
Package Codes
FB = VFBGA (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball
BB = Lead-free VFBGA (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball (contact factory)
Note:
Micron CellularRAM devices are available in several different configurations and densi-
ties (see Figure 3).
After building the part number from the part numbering chart, please go to the Micron
Part Marking Decoder Web site at
part number is offered and valid. If the device required is not on this list, please contact
the factory.
Due to the size of the package, the Micron standard part number is not printed on the
top of the device. Instead, an abbreviated device mark comprised of a five-digit alphanu-
meric code is used. The abbreviated device marks are cross-referenced to the Micron
part numbers at http://www.micron.com/partsearch. To view the location of the abbre-
viated mark on the device, please refer to customer service note, CSN-11, “Product
Mark/Label," at http://www.micron.com/csn.
MT 45 W 4M W 16
-30°C exceeds the CellularRAM Working Group 1.0 specification of -25°C.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
B
FB -70
8
http://www.micron.com/partsearch
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WT ES
Part-Numbering Information
Production Status
Blank = Production
ES = Engineering Sample
MS = Mechanical Sample
Operating Temperature
WT = -30°C to +85°C (see Note 1)
IT = -40° to +85°C (contact factory)
Standby Power Options
Blank = Standard
L = Low Power
Frequency
6 = 66 MHz
8 = 80 MHz
Access/Cycle Time
70 = 70ns
85 = 85ns
©2003 Micron Technology, Inc. All rights reserved.
to verify that the