ATMEGA64A-AU Atmel, ATMEGA64A-AU Datasheet - Page 311

MCU AVR 64K ISP FLASH 64-TQFP

ATMEGA64A-AU

Manufacturer Part Number
ATMEGA64A-AU
Description
MCU AVR 64K ISP FLASH 64-TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheets

Specifications of ATMEGA64A-AU

Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
53
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TQFP, 64-VQFP
Package
64TQFP
Device Core
AVR
Family Name
ATmega
Maximum Speed
16 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
53
Interface Type
SPI/USART
On-chip Adc
8-chx10-bit
Number Of Timers
4
Processor Series
ATMEGA64x
Core
AVR8
Data Ram Size
4 KB
Maximum Clock Frequency
16 MHz
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
Cpu Family
ATmega
Device Core Size
8b
Frequency (max)
16MHz
Total Internal Ram Size
4KB
# I/os (max)
53
Number Of Timers - General Purpose
4
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
2.7V
Instruction Set Architecture
RISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
64
Package Type
TQFP
For Use With
770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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27.8.2
8160C–AVR–07/09
Data Polling Flash
1. Power-up sequence:
2. Wait for at least 20 ms and enable SPI Serial Programming by sending the Programming
3. The SPI Serial Programming instructions will not work if the communication is out of syn-
4. The Flash is programmed one page at a time. The Page size is found in
5. The EEPROM array is programmed one byte at a time by supplying the address and data
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
Note:
When a page is being programmed into the Flash, reading an address location within the page
being programmed will give the value 0xFF. At the time the device is ready for a new page, the
programmed value will read correctly. This is used to determine when the next page can be writ-
ten. Note that the entire page is written simultaneously and any address within the page can be
used for polling. Data polling of the Flash will not work for the value 0xFF, so when programming
this value, the user will have to wait for at least t
a chip -erased device contains 0xFF in all locations, programming of addresses that are meant
to contain 0xFF, can be skipped. See
Apply power between V
tems, the programmer cannot guarantee that SCK is held low during Power-up. In this
case, RESET must be given a positive pulse of at least two CPU clock cycles duration
after SCK has been set to “0”.
As an alternative to using the RESET signal, PEN can be held low during Power-on
Reset while SCK is set to “0”. In this case, only the PEN value at Power-on Reset is
important. If the programmer cannot guarantee that SCK is held low during Power-up, the
PEN method cannot be used. The device must be powered down in order to commence
normal operation when using this method.
Enable serial instruction to pin MOSI.
chronization. When in sync. the second byte (0x53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all four
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
page
address and data together with the Load Program Memory Page instruction. To ensure
correct loading of the page, the data low byte must be loaded before data high byte is
applied for given address. The Program Memory Page is stored by loading the Write Pro-
gram Memory Page instruction with the 8 MSB of the address. If polling is not used, the
user must wait at least t
Accessing the SPI Serial Programming interface before the Flash write operation com-
pletes can result in incorrect programming.
together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling is not used, the user must wait
at least t
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
If other commands that polling (read) are applied before any write operation (FLASH, EEPROM,
Lock bits, Fuses) is completed, may result in incorrect programming.
300. The memory page is loaded one byte at a time by supplying the 7 LSB of the
CC
WD_EEPROM
power off.
before issuing the next byte. (See
CC
WD_FLASH
and GND while RESET and SCK are set to “0”. In some sys-
before issuing the next page. (See
Table 27-14
WD_FLASH
for t
WD_FLASH
before programming the next page. As
Table
27-14).
value.
Table
ATmega64A
Table 27-10 on
27-14).
311

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