STR711FR2T6 STMicroelectronics, STR711FR2T6 Datasheet - Page 47

• Manufacturer Part Number: STR711FR2T6
• Description: IC MCU ARM7 TDMI 256K 64-LQFP
• Manufacturer: STMicroelectronics
• Series: STR7r

Specifications of STR711FR2T6

• Core Processor: ARM7
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: HDLC, I²C, SmartCard, SPI, UART/USART, USB
• Peripherals: PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 256KB (256K x 8 + 16K)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 4x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: STR711x
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 64 KB
• Interface Type: CAN/EMI/USB
• Maximum Clock Frequency: 66 MHz
• Number Of Programmable I/os: 30
• Number Of Timers: 4
• Operating Supply Voltage: 3 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MCBSTR7, KSK-STR711-PL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STR710-SK/HIT, STR711-SK/IAR, STR712-SK/IAR, STR71X-SK/RAIS, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4-ch x 12-bit
• For Use With: MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KITMCBSTR7 - BOARD EVAL STM STR71X SERIES497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU497-4550 - KIT IAR STARTER STR711/STR712
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4513

STR71xF
4.3.4
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
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A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
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Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
In the case of an ARM7 CPU, in order to write robust code that can withstand all kinds of
stress, such as very strong electromagnetic disturbance, it is mandatory that the Data Abort,
Prefetch Abort and Undefined Instruction exceptions are managed by the application
software. This will prevent the code going into an undefined state or performing any
unexpected operation.
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
conforms with the IEC 1000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
SS
through a 100pF capacitor, until a functional disturbance occurs. This test
Electrical parameters
DD
and
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