STR711FR2T6 STMicroelectronics, STR711FR2T6 Datasheet - Page 50

• Manufacturer Part Number: STR711FR2T6
• Description: IC MCU ARM7 TDMI 256K 64-LQFP
• Manufacturer: STMicroelectronics
• Series: STR7r

Specifications of STR711FR2T6

• Core Processor: ARM7
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: HDLC, I²C, SmartCard, SPI, UART/USART, USB
• Peripherals: PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 256KB (256K x 8 + 16K)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 4x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: STR711x
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 64 KB
• Interface Type: CAN/EMI/USB
• Maximum Clock Frequency: 66 MHz
• Number Of Programmable I/os: 30
• Number Of Timers: 4
• Operating Supply Voltage: 3 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MCBSTR7, KSK-STR711-PL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STR710-SK/HIT, STR711-SK/IAR, STR712-SK/IAR, STR71X-SK/RAIS, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4-ch x 12-bit
• For Use With: MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KITMCBSTR7 - BOARD EVAL STM STR71X SERIES497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU497-4550 - KIT IAR STARTER STR711/STR712
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4513

Electrical parameters
4.3.5
50/78
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 29.
Notes:
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3. When the current limitation is not possible, the V
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. The R
ΣI
Symbol
I
INJ(PIN)
INJ(PIN)
V
V
R
R
refer to I
induced by V
I
C
V
V
V
V
V
V
I
PU
3)
lkg
hys
hys
PU
PD
IH
IH
IH
IO
IL
IL
IL
and I
PU
INJ(PIN)
PD
Input low level voltage
Input high level voltage
Schmitt trigger voltage hysteresis
2)
Input low level voltage
Input high level voltage
Schmitt trigger voltage hysteresis
2)
Input low level voltage
Input high level voltage
Injected Current on any I/O pin
Total injected current (sum of all
I/O and control pins)
Input leakage current
Weak pull-up equivalent
resistor
Weak pull-down equivalent
resistor
I/O pin capacitance
pull-up and R
current characteristics described in
I/O static characteristics
IN
<V
specification. A positive injection is induced by V
5)
5)
SS
. Refer to
Parameter
PD
pull-down equivalent resistor are based on a resistive transistor (corresponding
Section 4.2 on page 34
4)
1)
1)
1)
1)
1)
1)
Figure 18
IN
CMOS ports
P0.15 WAKEUP
TTL ports
V
V
V
SS
IN
IN
absolute maximum rating must be respected, otherwise
33
=
=
Conditions
≤
V
V
V
for more details.
and T
SS
33
IN
≤
to
V
Figure
33
A
unless otherwise specified. All
IN
>V
19).
33
while a negative injection is
0.7V
Min
110
110
2.0
2
33
1.35
Typ
150
150
0.8
0.9
0.4
5
0.3V
Max
± 25
700
700
0.8
0.8
± 4
±1
33
STR71xF
Unit
mA
µA
kΩ
kΩ
pF
V
V
V
V
V