MC9S12XEG128MAA Freescale Semiconductor, MC9S12XEG128MAA Datasheet - Page 1068
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MC9S12XEG128MAA
Manufacturer Part Number
MC9S12XEG128MAA
Description
MCU 16BIT 128K FLASH 80-QFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.MC9S12XEP768CAL.pdf
(1328 pages)
Specifications of MC9S12XEG128MAA
Core Processor
HCS12X
Core Size
16-Bit
Speed
50MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
59
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 12x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
80-QFP
Processor Series
S12XE
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
12 KB
Interface Type
CAN/SCI/SPI
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
59
Number Of Timers
25
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 12-bit
No. Of I/o's
59
Eeprom Memory Size
2KB
Ram Memory Size
12KB
Cpu Speed
50MHz
No. Of Timers
3
No. Of Pwm Channels
8
Digital Ic Case Style
QFP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Chapter 27 512 KByte Flash Module (S12XFTM512K3V1)
27.4.2.17 Program D-Flash Command
The Program D-Flash operation programs one to four previously erased words in the D-Flash user
partition. The Program D-Flash operation will confirm that the targeted location(s) were successfully
programmed upon completion.
Upon clearing CCIF to launch the Program D-Flash command, the user-supplied words will be transferred
to the Memory Controller and be programmed. The CCOBIX index value at Program D-Flash command
launch determines how many words will be programmed in the D-Flash block. No protection checks are
made in the Program D-Flash operation on the D-Flash block, only access error checks. The CCIF flag is
set when the operation has completed.
1068
FERSTAT
Register
FSTAT
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
Table 27-66. Erase Verify D-Flash Section Command Error Handling
CCOBIX[2:0]
Table 27-67. Program D-Flash Command FCCOB Requirements
MGSTAT1
MGSTAT0
EPVIOLIF
ACCERR
Error Bit
FPVIOL
000
001
010
011
100
101
MC9S12XE-Family Reference Manual , Rev. 1.23
Set if CCOBIX[2:0] != 010 at command launch
Set if a Load Data Field command sequence is currently active
Set if command not available in current mode (see
Set if an invalid global address [22:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the global address [22:0] points to an area of the D-Flash EEE partition
Set if the requested section breaches the end of the D-Flash block or goes into
the D-Flash EEE partition
None
Set if any errors have been encountered during the read
Set if any non-correctable errors have been encountered during the read
None
Global address [15:0] of word to be programmed
0x11
Word 1 program value, if desired
Word 2 program value, if desired
Word 3 program value, if desired
CAUTION
Word 0 program value
FCCOB Parameters
Error Condition
Global address [22:16] to
identify the D-Flash block
Table
27-30)
Freescale Semiconductor
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