FP75R12KE3 Infineon Technologies, FP75R12KE3 Datasheet - Page 11
![IGBT Modules 1200V 75A PIM](/photos/37/61/376155/149694207-01_sml.jpg)
FP75R12KE3
Manufacturer Part Number
FP75R12KE3
Description
IGBT Modules 1200V 75A PIM
Manufacturer
Infineon Technologies
Datasheet
1.FP75R12KE3.pdf
(12 pages)
Specifications of FP75R12KE3
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.15 V
Continuous Collector Current At 25 C
105 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
350 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
105A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Pd
350W
Collector Emitter Voltage V(br)ceo
1.2kV
Rohs Compliant
Yes
Packages
AG-ECONO3-1
Ic (max)
75.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
EconoPIM 3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FP75R12KE3
Manufacturer:
EUPEC
Quantity:
27
Part Number:
FP75R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP75R12KE3
Quantity:
115
IGBT-Module
IGBT-Modules
Schaltplan/ Circuit diagram
Gehäuseabmessungen/ Package outlines
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
Technische Information / Technical Information
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FP75R12KE3
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7
11(11)
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12
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NTC
DB-PIM-IGBT3_2Serie.xls
9