FP75R12KE3 Infineon Technologies, FP75R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FP75R12KE3
• Description: IGBT Modules 1200V 75A PIM
• Manufacturer: Infineon Technologies

Specifications of FP75R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Packages: AG-ECONO3-1
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
25
20
15
10
5
0
30
25
20
15
10
5
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
5
20
10
Eon
Eoff
Erec
Eon
Eoff
Erec
40
15
FP75R12KE3
60
20
R
I
C
G
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
25
80
= f (R
C
), E
G
), E
GE
off
30
V
100
= +-15 V ,
off
GE
= f (I
= ±15 V,
= f (R
C
), E
35
G
), E
rec
I
120
c
= I
= f (I
rec
nenn
R
Gon
40
= f (R
C
,
)
= R
V
V
CC
CC
G
140
Goff
)
=
=
=
45
DB-PIM-IGBT3_2Serie.xls
600 V
4,7 Ohm
600 V
160
50