FP75R12KE3 Infineon Technologies, FP75R12KE3 Datasheet - Page 4

• Manufacturer Part Number: FP75R12KE3
• Description: IGBT Modules 1200V 75A PIM
• Manufacturer: Infineon Technologies

Specifications of FP75R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Packages: AG-ECONO3-1
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
Luftstrecke
clearance
Kriechstrecke
creeping distance
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Transiente Thermische Eigenschaften / Transient Thermal properties
Technische Information / Technical Information
2
3
4
1
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Schraube M 5
screw M 5
Pin-Erde
Pin-GND
Pin-Erde
Pin-GND
FP75R12KE3
3,949E-02
6,139E-02
1,580E-01
8,884E-02
r
i
[K/W]
IGBT-Wechselrichter
4(11)
IGBT-Inverter
Paste
grease
=1W/m*K
2,345E-03
2,820E-01
2,820E-02
1,128E-01
=1W/m*K
i
[s]
R
R
T
T
T
M
G
thJC
thCK
op
stg
vj
min.
5,906E-02
3,815E-01
1,099E-01
3,480E-02
-40
-40
3
-
-
-
-
-
-
-
-
-
r
Diode-Wechselrichter
i
[K/W]
Diode-Inverter
Al
typ.
0,04
0,02
0,04
225
300
7,5
10
2
-
-
-
-
-
-
-
-
-
O
3
DB-PIM-IGBT3_2Serie.xls
max.
0,65
0,35
0,58
150
125
125
3,333E-03
3,429E-02
1,294E-01
7,662E-01
0,6
1,2
6
-
-
-
i
[s]
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
mm
mm
Nm
°C
°C
°C
g