FP75R12KE3 Infineon Technologies, FP75R12KE3 Datasheet - Page 9

• Manufacturer Part Number: FP75R12KE3
• Description: IGBT Modules 1200V 75A PIM
• Manufacturer: Infineon Technologies

Specifications of FP75R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Packages: AG-ECONO3-1
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch) I
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,5
Tvj = 25°C
Tvj = 125°C
1
1
1,5
FP75R12KE3
Tvj = 25°C
Tvj = 125°C
1,5
2
V
V
CE
F
9(11)
[V]
[V]
2,5
2
3
2,5
3,5
F
= f (V
3
V
I
GE
C
F
)
= f (V
= 15 V
4
CE
3,5
)
4,5
DB-PIM-IGBT3_2Serie.xls
5
4