FP75R12KE3 Infineon Technologies, FP75R12KE3 Datasheet - Page 5

• Manufacturer Part Number: FP75R12KE3
• Description: IGBT Modules 1200V 75A PIM
• Manufacturer: Infineon Technologies

Specifications of FP75R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Packages: AG-ECONO3-1
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
140
120
100
140
120
100
80
60
40
20
80
60
40
20
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
0,5
0,5
1
Vge=19V
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
1
Tvj = 25°C
Tvj = 125°C
FP75R12KE3
1,5
1,5
V
V
2
2
CE
CE
5(11)
[V]
[V]
2,5
2,5
3
3
I
V
C
GE
T
I
= f (V
C
vj
= 15 V
= 125°C
= f (V
CE
3,5
3,5
CE
)
)
4
4
4,5
4,5
DB-PIM-IGBT3_2Serie.xls
5
5