FP75R12KE3 Infineon Technologies, FP75R12KE3 Datasheet - Page 8

• Manufacturer Part Number: FP75R12KE3
• Description: IGBT Modules 1200V 75A PIM
• Manufacturer: Infineon Technologies

Specifications of FP75R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Packages: AG-ECONO3-1
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
160
140
120
100
1
80
60
40
20
0,001
0
0
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
Sicherer Arbeitsbereich IGBT-Wechselr. (RBSOA)
Reverse bias save operating area (RBSOA)
200
Zth-IGBT
Zth-FWD
IC,Modul
IC,Chip
0,01
400
FP75R12KE3
V
t [s]
CE
600
8(11)
[V]
0,1
Ri und ti-Werte siehe S. 4
Ri and ti-Values see P. 4
800
V
Z
GE
thJC
= 15V, T
= f (t)
1000
j
= 125°C
1
1200
DB-PIM-IGBT3_2Serie.xls
1400
10