M52S128168A-7.5BG ELITE SEMICONDUCTOR, M52S128168A-7.5BG Datasheet - Page 25

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M52S128168A-7.5BG

Manufacturer Part Number
M52S128168A-7.5BG
Description
DRAM IC
Manufacturer
ELITE SEMICONDUCTOR
Datasheet

Specifications of M52S128168A-7.5BG

Ic Interface Type
Parallel
Frequency
133MHz
Termination Type
SMD
Supply Voltage Max
2.7V
Memory Voltage, Vcc
2.5 V
Interface Type
Parallel
Memory Size
128Mbit
Supply Voltage Min
2.3V
Operating Temperature Min
0��C
Filter Terminals
SMD
Rohs Compliant
Yes
Operating Temperature Max
70°C
Page Size
128MB
Memory Case Style
FBGA
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ESMT
10. Clock Suspend Exit & Power Down Exit
11. Auto Refresh & Self Refresh
*Note : 1. Active power down : one or more banks active state.
Elite Semiconductor Memory Technology Inc.
I n t e r n a l
C L K
C K E
C M D
2. Precharge power down : all banks precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
4. Before executing auto/self refresh command, all banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh entry, refresh interval and refresh operation are performed internally.
CM D
C L K
C K E
CM D
C L K
C K E
C L K
No precharge commands are required after auto refresh command.
During t
After self refresh entry, self refresh mode is kept while CKE is low.
During self refresh entry, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state.
For the time interval of t
1 ) C l o c k S u s p e n d ( = A c t i v e P o w e r D o w n ) E x i t
2 ) S e l f R e f r e s h
1 ) A u t o R e f r e s h & S e l f R e f r e s h
* N o t e 1
RFC
P R E
P R E
from auto refresh command, any other command can not be accepted.
* N o t e 4
* N o t e 4
t
t
R P
R P
* N o t e 6
RFC
from self refresh exit command, any other command can not be accepted.
t
A R
S S
S R
* N o t e 3
R D
t
R F C
I n t e r n a l
C K E
C M D
C L K
C L K
CM D
t
2 ) P o w e r D o w n ( = P r e c h a r g e P o w e r D o w n )
R F C
* N o t e 2
* N o t e 5
C M D
N O P
t
Publication Date: Oct. 2007
Revision: 1.1
S S
A C T
M52S128168A
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