M52S128168A-7.5BG ELITE SEMICONDUCTOR, M52S128168A-7.5BG Datasheet - Page 9

• Manufacturer Part Number: M52S128168A-7.5BG
• Description: DRAM IC
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128168A-7.5BG

• Ic Interface Type: Parallel
• Frequency: 133MHz
• Termination Type: SMD
• Supply Voltage Max: 2.7V
• Memory Voltage, Vcc: 2.5 V
• Interface Type: Parallel
• Memory Size: 128Mbit
• Supply Voltage Min: 2.3V
• Operating Temperature Min: 0��C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Operating Temperature Max: 70°C
• Page Size: 128MB
• Memory Case Style: FBGA
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Elite Semiconductor Memory Technology Inc.
Function
Address
A8
0
0
1
1
A7
0
1
0
1
Test Mode
BA0
0
Mode Register Set
Reserved
Reserved
Reserved
BA1
0
Type
A11
0
A10/AP
A6
0
0
0
0
1
1
1
1
0
A5
CAS Latency
0
0
1
1
0
0
1
1
A9
0
A4
0
1
0
1
0
1
0
1
A8
0
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
2
3
A7
0
A3
A6
0
1
Burst Type
CAS Latency
Sequential
Interleave
A5
Type
A4
Full Page Length : 512
A2
0
0
0
0
1
1
1
1
A3
BT
Publication Date: Oct. 2007
Revision: 1.1
A1
0
0
1
1
0
0
1
1
A2
M52S128168A
Burst Length
Burst Length
A0
0
1
0
1
0
1
0
1
A1
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
BT = 0
A0
1
2
4
8
9/47
BT = 1
1
2
4
8