M52S128168A-7.5BG ELITE SEMICONDUCTOR, M52S128168A-7.5BG Datasheet - Page 42

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M52S128168A-7.5BG

Manufacturer Part Number
M52S128168A-7.5BG
Description
DRAM IC
Manufacturer
ELITE SEMICONDUCTOR
Datasheet

Specifications of M52S128168A-7.5BG

Ic Interface Type
Parallel
Frequency
133MHz
Termination Type
SMD
Supply Voltage Max
2.7V
Memory Voltage, Vcc
2.5 V
Interface Type
Parallel
Memory Size
128Mbit
Supply Voltage Min
2.3V
Operating Temperature Min
0��C
Filter Terminals
SMD
Rohs Compliant
Yes
Operating Temperature Max
70°C
Page Size
128MB
Memory Case Style
FBGA
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ESMT
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
*Note:
Elite Semiconductor Memory Technology Inc.
1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + t
3. Can not violate minimum refresh specification. (64ms)
SS
prior to Row active command.
Publication Date: Oct. 2007
Revision: 1.1
M52S128168A
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