M52S128168A-7.5BG ELITE SEMICONDUCTOR, M52S128168A-7.5BG Datasheet - Page 42

• Manufacturer Part Number: M52S128168A-7.5BG
• Description: DRAM IC
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128168A-7.5BG

• Ic Interface Type: Parallel
• Frequency: 133MHz
• Termination Type: SMD
• Supply Voltage Max: 2.7V
• Memory Voltage, Vcc: 2.5 V
• Interface Type: Parallel
• Memory Size: 128Mbit
• Supply Voltage Min: 2.3V
• Operating Temperature Min: 0��C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Operating Temperature Max: 70°C
• Page Size: 128MB
• Memory Case Style: FBGA
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
*Note:
Elite Semiconductor Memory Technology Inc.
1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + t
3. Can not violate minimum refresh specification. (64ms)
SS
prior to Row active command.
Publication Date: Oct. 2007
Revision: 1.1
M52S128168A
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