HGTP5N120BND Fairchild Semiconductor, HGTP5N120BND Datasheet - Page 2

• Manufacturer Part Number: HGTP5N120BND
• Description: IGBT NPT N-CH 1200V 21A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP5N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 5A
• Current - Collector (ic) (max): 21A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 21 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
©2003 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
1. Pulse width limited by maximum junction temperature.
2. V
At T
At T
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CE(PK)
C
C
= 25
= 110
o
= 840V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
C
= 25
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 25
= 25
C
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
d(ON)I
E
I
I
E
G(ON)
CES
GES
GEP
OFF
t
t
ON
CES
rI
fI
I
V
I
V
I
V
T
L = 5mH, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 5mH,
Test Circuit (Figure 20)
C
C
C
C
C
CE
GE
GE
J
GE
CE
CE
CE
G
= 250 A, V
= 5A,
= 45 A, V
= 5A, V
= 5A,
= 150
= 25 ,
= 5A,
= 1200V
= 15V
= 20V
= 600V
= 960V,
= 15V,
o
TEST CONDITIONS
C, R
CE
CE(PK)
CE
= 600V
GE
G
= V
= 25
= 0V
= 1200V
GE
J
T
T
T
T
T
V
V
J
= 25
, T
C
C
C
C
C
GE
GE
V
C110
GEM
= 25
= 125
= 150
= 25
= 150
GES
CES
STG
GE
C25
pkg
CM
= 15V
= 20V
SC
SC
o
C,
D
L
= 15V,
o
o
C
C
o
o
o
C
C
C
HGTG5N120BND
HGTP5N120BND
30A at 1200V
-55 to 150
1200
MIN
6.0
30
1200
1.33
167
300
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
21
10
40
15
20
30
8
HGTG5N120BND, HGTP5N120BND, Rev. B1
TYP
2.45
10.5
100
160
130
450
390
3.7
6.8
53
60
22
15
-
-
-
-
-
MAX
250
180
160
600
450
1.5
2.7
4.2
250
65
72
25
20
-
-
-
-
-
UNITS
W/
o
o
o
W
V
A
A
A
V
V
C
C
C
UNITS
o
s
s
C
mA
nC
nC
nA
ns
ns
ns
ns
V
V
V
V
A
V
A
A
J
J